Name: TSM60NB099CZ-C0G
Brand: Taiwan Semiconductor Corporation
SKU: TSM60NB099CZ C0G
Availability: InStock
Rating: 5 (138 reviews)

TSM60NB099CZ-C0G

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Numero di parte	TSM60NB099CZ-C0G
Produttore	Taiwan Semiconductor Corporation
Descrizione	MOSFET N-CHANNEL 600V 38A TO220
Scheda dati
pacchetto	-
ECAD
A magazzino	0 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	nov 26 - dic 1 (Scegli una spedizione rapida)
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Specifiche TSM60NB099CZ-C0G

Produttore	Taiwan Semiconductor Corporation
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Corrente - Scarico continuo (Id) @ 25 ° C	38A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	10V
Vgs (th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	62 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	2587 pF @ 100 V
Vgs (massimo)	±30V
Caratteristica FET	-
Dissipazione di potenza (max)	298W (Tc)
Rds On (Max) @ Id, Vgs	99mOhm @ 11.3A, 10V
temperatura di esercizio	-55°C ~ 150°C (TJ)
Tipo di montaggio	Through Hole
Pacchetto dispositivo fornitore	TO-220
Pacchetto / caso	TO-220-3

TSM60NB099CZ-C0G Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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